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Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
* * * * * * * *
TGF2021-02
Key Features and Performance
Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 150mA to 480mA) Chip Dimensions: 0.57 x 0. 79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
Product Description
The TriQuint TGF2021-02 is a discrete 2 mm pHEMT which operates from DC12 GHz. The TGF2021-02 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-02 typically provides > 33 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-02 appropriate for high efficiency applications. The TGF2021-02 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-02 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant
Primary Applications
* * * * *
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 20 15 10 5 0 0 2 4
MSG
MAG
6
8
10
12
14
16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
Advance Product Information
September 19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V
-
TGF2021-02
Value
12.5 V -5V to 0V 940 mA 14 mA 28 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 43.3 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 600 750 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 C, Nominal) SYMBOL
Power Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/,4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 33 59 11.5 24.50 1.077 0.778 155.2 33.7 55 11 27.79 1.011 0.774 152.7 Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 33.8 50 11 13.30 0.927 0.719 164.9 34.5 48 11 15.97 0.953 0.720 161.4
TGF2021-02
Vd = 12V Idq = 150mA UNITS
PARAMETER
Vd = 10V Idq = 150mA
dBm % dB pF -
dBm % dB pF -
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance Test Conditions TCH (oC)
148
TJC (qC/W)
43.3
TM (HRS)
1.2 E+6
Vd = 12 V (channel to backside of carrier) Idq = 150 mA Pdiss = 1.8 W
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Linear Model for 1mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2021-02
vi
-
VvAC@HUApryy
Ls
Rp, Cp
SrsrrprAQyhr
Rs
Source Gate
Source Source
UPC
Source
Drain
UPC = 1 mm Unit pHEMT Cell
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Idq = 75mA
0.45 0.14 0.41 0.310 2.39 1.22 0.20 149.1 0.115 6.29 0.009 0.089 0.120 33000 349000
Vd = 8V Idq = 100mA
0.45 0.14 0.43 0.318 2.58 1.19 0.201 152.3 0.107 6.63 0.009 0.089 0.120 33000 425000
Vd = 8V Idq = 125mA
0.45 0.14 0.46 0.314 2.70 1.20 0.201 158.8 0.101 6.99 0.009 0.089 0.120 35100 405000
Vd = 10V Idq = 75mA
0.45 0.17 0.41 0.296 2.61 1.24 0.198 171.8 0.101 7.19 0.009 0.089 0.120 28900 305000
Vd = 10V Idq = 100mA
0.450 0.160 0.450 0.303 2.74 1.23 0.199 173.7 0.098 7.410 0.010 0.089 0.120 35700 366000
Vd = 12V Idq = 75mA
0.45 0.19 0.410 0.286 2.72 1.27 0.196 187.9 0.096 7.79 0.010 0.089 0.120 24400 238000
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-02
Linear Model for 2mm pHEMT
L - via = 0.0135 nH (3x)
2 UPC
3
Gate Pads (2x)
Drain Pads (2x)
1 UPC
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-02
Unmatched S-parameter for 2mm pHEMT
Bias Conditions: Vd=12V, Idq=150mA
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.444 -108.860 26.175 121.91 -32.618 34.41 -11.025 -98.11 1 -0.572 -140.91 21.362 103.42 -31.423 18.42 -11.493 -127.41 1.5 -0.605 -153.69 18.095 94.44 -31.187 11.96 -11.428 -137.24 2 -0.616 -160.46 15.676 88.41 -31.135 8.45 -11.181 -140.97 2.5 -0.620 -164.67 13.761 83.63 -31.146 6.22 -10.844 -142.33 3 -0.621 -167.58 12.175 79.50 -31.191 4.65 -10.455 -142.71 3.5 -0.619 -169.72 10.819 75.76 -31.257 3.50 -10.037 -142.70 4 -0.617 -171.39 9.632 72.27 -31.340 2.63 -9.606 -142.57 4.5 -0.613 -172.74 8.574 68.95 -31.437 1.98 -9.173 -142.48 5 -0.610 -173.86 7.619 65.77 -31.546 1.49 -8.745 -142.47 5.5 -0.605 -174.82 6.745 62.70 -31.666 1.16 -8.329 -142.57 6 -0.600 -175.66 5.939 59.71 -31.795 0.96 -7.926 -142.80 6.5 -0.595 -176.41 5.190 56.80 -31.933 0.89 -7.540 -143.14 7 -0.589 -177.09 4.488 53.96 -32.077 0.95 -7.172 -143.58 7.5 -0.584 -177.71 3.828 51.18 -32.228 1.13 -6.821 -144.12 8 -0.578 -178.28 3.203 48.45 -32.384 1.44 -6.489 -144.73 8.5 -0.572 -178.81 2.610 45.78 -32.543 1.87 -6.174 -145.42 9 -0.566 -179.32 2.044 43.16 -32.704 2.42 -5.876 -146.17 9.5 -0.559 -179.80 1.503 40.59 -32.865 3.11 -5.595 -146.97 10 -0.553 179.75 0.984 38.06 -33.025 3.92 -5.330 -147.81 10.5 -0.547 179.31 0.485 35.58 -33.182 4.85 -5.079 -148.69 11 -0.541 178.88 0.005 33.15 -33.333 5.92 -4.842 -149.59 11.5 -0.535 178.47 -0.459 30.75 -33.478 7.10 -4.619 -150.52 12 -0.528 178.08 -0.908 28.40 -33.614 8.41 -4.409 -151.46 12.5 -0.522 177.69 -1.343 26.09 -33.738 9.83 -4.210 -152.42 13 -0.516 177.31 -1.765 23.82 -33.849 11.36 -4.022 -153.39 13.5 -0.510 176.94 -2.175 21.59 -33.946 12.98 -3.844 -154.36 14 -0.505 176.57 -2.574 19.39 -34.026 14.69 -3.677 -155.34 14.5 -0.499 176.21 -2.963 17.23 -34.088 16.48 -3.518 -156.32 15 -0.493 175.86 -3.341 15.10 -34.130 18.32 -3.368 -157.29 15.5 -0.488 175.51 -3.710 13.01 -34.153 20.21 -3.226 -158.27 16 -0.483 175.16 -4.071 10.95 -34.154 22.13 -3.091 -159.24 16.5 -0.477 174.82 -4.424 8.93 -34.135 24.06 -2.964 -160.21 17 -0.472 174.49 -4.769 6.93 -34.095 25.99 -2.843 -161.17 17.5 -0.467 174.15 -5.107 4.97 -34.035 27.90 -2.728 -162.13 18 -0.463 173.82 -5.439 3.03 -33.956 29.77 -2.619 -163.07 18.5 -0.458 173.49 -5.764 1.13 -33.859 31.60 -2.515 -164.02 19 -0.453 173.17 -6.083 -0.75 -33.745 33.37 -2.416 -164.95 19.5 -0.449 172.85 -6.396 -2.61 -33.615 35.08 -2.323 -165.87 20 -0.445 172.53 -6.704 -4.44 -33.473 36.72 -2.233 -166.79 20.5 -0.441 172.21 -7.007 -6.24 -33.318 38.28 -2.148 -167.69 21 -0.437 171.89 -7.306 -8.03 -33.153 39.75 -2.067 -168.59 21.5 -0.433 171.58 -7.600 -9.79 -32.979 41.15 -1.989 -169.48 22 -0.429 171.26 -7.890 -11.53 -32.798 42.46 -1.915 -170.36 22.5 -0.425 170.95 -8.176 -13.25 -32.611 43.68 -1.845 -171.23 23 -0.422 170.64 -8.459 -14.95 -32.419 44.83 -1.777 -172.10 23.5 -0.418 170.34 -8.738 -16.63 -32.224 45.89 -1.713 -172.95 24 -0.415 170.03 -9.015 -18.29 -32.026 46.87 -1.651 -173.79 24.5 -0.412 169.72 -9.288 -19.94 -31.826 47.79 -1.591 -174.63 25 -0.409 169.42 -9.559 -21.57 -31.626 48.63 -1.534 -175.46 25.5 -0.406 169.12 -9.828 -23.19 -31.426 49.40 -1.480 -176.28 26 -0.403 168.82 -10.094 -24.79 -31.226 50.10 -1.427 -177.09
Note: The s-parameters are calculated by connecting nodes 1-2 together, and nodes 3-4 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-02 Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-02
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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